US 12,277,332 B2
Method and memory device for performing wear leveling
Wei-Cheng Su, New Taipei (TW); Chih-Hsiang Yang, New Taipei (TW); and Hsiang-Lan Lung, Kaohsiung (TW)
Assigned to MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed by MACRONIX INTERNATIONAL CO., LTD., Hsinchu (TW)
Filed on Aug. 18, 2023, as Appl. No. 18/451,907.
Prior Publication US 2025/0060892 A1, Feb. 20, 2025
Int. Cl. G06F 3/06 (2006.01)
CPC G06F 3/064 (2013.01) [G06F 3/0616 (2013.01); G06F 3/0656 (2013.01); G06F 3/0679 (2013.01)] 10 Claims
OG exemplary drawing
 
1. A method of performing wear leveling in a memory device, the memory device comprising a plurality of blocks, the method including:
receiving data to be written transmitted by a host in the memory device;
determining whether the data to be written is in a common data format or in a uncommon data format;
predicting the data to be written as a first type of data or a second type of data in the common data format;
referencing an erase count table in an erase count table buffer of the memory device; and
in response that the data to be written is predicted as the first type of data, writing the data to be written into the block with a highest erase count among these blocks, and in response that the data to be written is predicted as the second type of data, writing the data to be written into the block with a lowest erase count among these blocks,
wherein in response that the data to be written has the uncommon data format, the data to be written is written to the block with the lowest erase count.