US 12,276,965 B2
Process recipe, method and system for generating same, and semiconductor manufacturing method
Shaowen Qiu, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Apr. 25, 2022, as Appl. No. 17/660,473.
Claims priority of application No. 202210039424.3 (CN), filed on Jan. 13, 2022.
Prior Publication US 2023/0221702 A1, Jul. 13, 2023
Int. Cl. H01L 21/66 (2006.01); G03F 7/00 (2006.01); G05B 19/4155 (2006.01)
CPC G05B 19/4155 (2013.01) [G03F 7/70525 (2013.01); G03F 7/70558 (2013.01); G03F 7/70575 (2013.01); G03F 7/70633 (2013.01); G05B 2219/45031 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A method for generating a diffraction-based process recipe, comprising:
providing a basic process recipe, wherein parameters in the basic process recipe comprise an exposure wavelength and an exposure energy, the basic process recipe is used to form an initial alignment pattern, and the initial alignment pattern corresponds to a standard overlay pattern; and
performing a feedback correction step for at least one time to adjust the basic process recipe and obtain an actual process recipe, wherein the performing a feedback correction step each time comprises:
obtaining a first pattern and a second pattern based on the basic process recipe prior to a current feedback correction step, wherein the first pattern is the initial alignment pattern that is developed, and the second pattern is the initial alignment pattern that is etched; and
adjusting the basic process recipe prior to the current feedback correction step based on a difference between the first pattern and the second pattern;
wherein
a method for obtaining the basic process recipe comprises:
providing an initial range of the exposure wavelength and an initial range of the exposure energy; and
selecting, based on a preset precision of the pattern, the exposure wavelength and the exposure energy that fall within the initial ranges, so as to obtain an original process recipe, and adjusting the original process recipe for at least one time, wherein the adjusting comprises:
obtaining a third pattern based on the original process recipe, wherein the third pattern is obtained by developing based on the original process recipe; and
obtaining a difference between the third pattern and the standard overlay pattern, and adjusting the original process recipe based on the difference between the third pattern and the standard overlay pattern, so as to obtain the basic process recipe.