US 12,276,921 B2
Substrate comprising a target arrangement, and associated at least one patterning device, lithographic method and metrology method
Olger Victor Zwier, Eindhoven (NL); Maurits Van Der Schaar, Eindhoven (NL); Hilko Dirk Bos, Utrecht (NL); Hans Van Der Laan, Veldhoven (NL); S. M. Masudur Rahman Al Arif, Veldhoven (NL); Henricus Wilhelmus Maria Van Buel, 's-Hertogenbosch (NL); Armand Eugene Albert Koolen, Nuth (NL); Victor Emanuel Calado, Rotterdam (NL); Kaustuve Bhattacharyya, Veldhoven (NL); Jin Lian, Veldhoven (NL); Sebastianus Adrianus Goorden, Eindhoven (NL); and Hui Quan Lim, Eindhoven (NL)
Assigned to ASML Netherlands B.V., Veldhoven (NL)
Appl. No. 17/923,913
Filed by ASML Netherlands B.V., Veldhoven (NL)
PCT Filed Apr. 21, 2021, PCT No. PCT/EP2021/060403
§ 371(c)(1), (2) Date Nov. 8, 2022,
PCT Pub. No. WO2021/224009, PCT Pub. Date Nov. 11, 2021.
Claims priority of application No. 20173476 (EP), filed on May 7, 2020; and application No. 20182160 (EP), filed on Jun. 25, 2020.
Prior Publication US 2023/0176491 A1, Jun. 8, 2023
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70641 (2013.01) [G03F 7/70558 (2013.01); G03F 7/70625 (2013.01); G03F 7/70633 (2013.01)] 17 Claims
OG exemplary drawing
 
1. A substrate comprising:
at least one target arrangement suitable for metrology of a lithographic process, the target arrangement comprising at least a first set of target regions configured for measurement along a first direction and a second set of target regions configured for measurement along a second direction that is different from the first direction,
wherein the first set of target regions comprises at least a first target type and a second target type, the first target type and the second target type each being configured for measurement along the first direction, and the second target type having a pitch value or an orientation that is different from that of the first target type, and
wherein, for each of the first set of target regions and the second set of target regions, the target arrangement further comprises a corresponding similar set of target regions that is positioned to be centrosymmetric, with respect to the respective first set of target regions or second set of target regions, about a point that is located within a region bounded by the target arrangement.