US 12,276,919 B2
Method for controlling a semiconductor manufacturing process
Marc Hauptmann, Turnhout (BE); Cornelis Johannes Henricus Lambregts, Geldrop (NL); Amir Bin Ismail, Eindhoven (NL); Rizvi Rahman, Eindhoven (NL); Allwyn Boustheen, Eindhoven (NL); Raheleh Pishkari, Eindhoven (NL); Everhardus Cornelis Mos, Best (NL); Ekaterina Mikhailovna Viatkina, Eindhoven (NL); Roy Werkman, Eindhoven (NL); and Ralph Brinkhof, Vught (NL)
Assigned to ASML NETHERLANDS B.V., Veldhoven (NL)
Appl. No. 17/635,290
Filed by ASML NETHERLANDS B.V., Veldhoven (NL)
PCT Filed Jul. 16, 2020, PCT No. PCT/EP2020/070151
§ 371(c)(1), (2) Date Feb. 14, 2022,
PCT Pub. No. WO2021/032376, PCT Pub. Date Feb. 25, 2021.
Claims priority of application No. 19192577 (EP), filed on Aug. 20, 2019.
Prior Publication US 2022/0236647 A1, Jul. 28, 2022
Int. Cl. G03F 7/00 (2006.01)
CPC G03F 7/70525 (2013.01) [G03F 7/705 (2013.01); G03F 7/70508 (2013.01); G03F 7/70633 (2013.01); G03F 7/7065 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method for controlling a semiconductor manufacturing process, the method comprising:
obtaining first metrology data based on measurements performed after a first process step and before at least one additional process step;
obtaining second metrology data based on measurements performed after the first process step and the at least one additional process step;
estimating a contribution to the process of: a) a control action which is at least partially based on the second metrology data and/or b) the at least one additional process step by using at least partially the second metrology data;
determining a Key Performance Indicator (KPI) or a correction for the first process step, using the first metrology data and the estimated contribution; and
correcting, optimizing or otherwise configuring the process based on the KPI or the correction and/or providing a signal representing, or based on, the KPI or the correction to a tool or a system for use by the tool or the system in correction, optimization or other configuration of the process,
wherein the data comprised within the first metrology data is distributed less densely across the one or more substrates compared to the data comprised within the second metrology data.