US 12,276,914 B2
Developing method and apparatus
Helei Sun, Hefei (CN); and Buxiang Chen, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Filed on Jan. 14, 2022, as Appl. No. 17/575,865.
Application 17/575,865 is a continuation of application No. PCT/CN2021/103867, filed on Jun. 30, 2021.
Claims priority of application No. 202011241124.0 (CN), filed on Nov. 9, 2020.
Prior Publication US 2022/0146942 A1, May 12, 2022
Int. Cl. G03F 7/30 (2006.01); G03F 7/16 (2006.01); H01L 21/67 (2006.01)
CPC G03F 7/3021 (2013.01) [G03F 7/162 (2013.01); H01L 21/67017 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A developing method, comprising:
obtaining airflow conditions above a wafer to be developed;
setting a developing procedure according to the airflow conditions; and
developing the wafer to be developed according to the developing procedure, wherein the developing procedure comprises a pre-wetting process, a main developing process, a rinsing process, and a spin-drying process; and,
wherein the main developing process comprises the following:
controlling the wafer to be developed to rotate at a preset rotation speed for a preset rotation time after the wafer to be developed is allowed to stand for a preset standing time; and
repeating the operation of controlling the wafer to be developed to rotate at the preset rotation speed for the preset rotation time after the wafer to be developed is allowed to stand for the preset standing time until a preset development time is reached.