US 12,276,907 B2
Photoresist inspection apparatus, photoresist inspection method using the same, and electron beam exposure apparatus
Sukjong Bae, Seoul (KR); Johan Hofkens, Leuven (BE); Haifeng Yuan, Leuven (BE); and Flip de Jong, Leuven (BE)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Feb. 24, 2022, as Appl. No. 17/679,749.
Claims priority of application No. 10 2021 0104898 (KR), filed on Aug. 9, 2021.
Prior Publication US 2023/0042743 A1, Feb. 9, 2023
Int. Cl. G03F 7/20 (2006.01); G01N 21/64 (2006.01); G03F 1/86 (2012.01); G03F 7/00 (2006.01); G03F 7/22 (2006.01); G01N 21/956 (2006.01)
CPC G03F 1/86 (2013.01) [G01N 21/64 (2013.01); G03F 7/2004 (2013.01); G03F 7/70916 (2013.01); G01N 2021/95676 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A photoresist inspection method comprising:
providing a photoresist on a substrate;
irradiating the photoresist comprising a plurality of fluorophores with an electron beam and an excitation beam;
detecting a fluorescent light generated by the photoresist in response to the excitation beam; and
evaluating the photoresist based on the fluorescent light, wherein the evaluating of the photoresist comprises generating a histogram of magnitudes of distance movement of the fluorophores based on a vector map indicating movements of the plurality of fluorophores in the photoresist due to exposure of the electron beam.