US 12,276,905 B2
Blank mask and photomask using the same
GeonGon Lee, Seoul (KR); Inkyun Shin, Seoul (KR); Seong Yoon Kim, Seoul (KR); Suk Young Choi, Seoul (KR); Hyung-joo Lee, Seoul (KR); Sung Hoon Son, Seoul (KR); and Min Gyo Jeong, Seoul (KR)
Assigned to SK enpulse Co., Ltd., Pyeongtaek-si (KR)
Filed by SK enpulse Co., Ltd., Pyeongtaek-si (KR)
Filed on May 20, 2022, as Appl. No. 17/749,387.
Claims priority of application No. 10-2021-0065366 (KR), filed on May 21, 2021.
Prior Publication US 2022/0382141 A1, Dec. 1, 2022
Int. Cl. G03F 1/32 (2012.01); G03F 1/48 (2012.01)
CPC G03F 1/32 (2013.01) [G03F 1/48 (2013.01)] 9 Claims
 
1. A blank mask comprising:
a transparent substrate and a light shielding film disposed on the transparent substrate,
wherein the light shielding film comprises a transition metal and at least any one between oxygen and nitrogen,
wherein the light shielding film comprises a first light shielding layer and a second light shielding layer disposed on the first light shielding layer, and
wherein the light shielding film has an Rd value of Equation 1 below which is 0.4 to 0.8;

OG Complex Work Unit Math
where in the Equation 1, the er1 value is an etching rate of the first light shielding layer measured by etching with argon gas, and
the er2 value is an etching rate of the second light shielding layer measured by etching with argon gas.