US 12,276,839 B2
Manufacturing a semiconductor structure
Maria Johanna Helena Jochem, Eindhoven (NL)
Assigned to SMART PHOTONICS HOLDING B.V., Eindhoven (NL)
Filed by SMART Photonics Holding B.V., Eindhoven (NL)
Filed on Apr. 14, 2022, as Appl. No. 17/721,053.
Application 17/721,053 is a continuation of application No. PCT/EP2020/079295, filed on Oct. 16, 2020.
Claims priority of application No. 1915374 (GB), filed on Oct. 23, 2019.
Prior Publication US 2022/0244460 A1, Aug. 4, 2022
Int. Cl. G02B 6/12 (2006.01); G02B 6/136 (2006.01)
CPC G02B 6/136 (2013.01) [G02B 6/12004 (2013.01); G02B 2006/12078 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
(i) depositing a first layer in contact with a first surface area of a substrate, the substrate being of a first semiconductor material and the first layer being of a second semiconductor material;
(ii) depositing a second layer in contact with a second surface area of the substrate, the second surface area substantially co-planar with and outwards of the first surface area, and the second layer being of the first semiconductor material or a third semiconductor material;
(iii) depositing a third layer in contact with the first layer and the second layer, the third layer being of the first semiconductor material or the third semiconductor material or a fourth semiconductor material;
(iv) removing a portion of the third layer to expose a portion of the first layer; and
(v) removing at least a portion of the first layer to create a cavity between the substrate, the second layer and the third layer.