US 12,276,838 B2
Semiconductor device and manufacturing method thereof having grating coupled dies and nanostructures
Yu-Kuang Liao, Hsinchu (TW); Jia-Xsing Li, Hsinchu (TW); Ping-Jung Wu, Hsinchu (TW); Tsang-Jiuh Wu, Hsinchu (TW); Wen-Chih Chiou, Miaoli County (TW); and Chen-Hua Yu, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jul. 27, 2023, as Appl. No. 18/359,894.
Application 18/359,894 is a continuation of application No. 17/965,755, filed on Oct. 13, 2022, granted, now 11,774,675.
Application 17/965,755 is a continuation of application No. 17/213,198, filed on Mar. 25, 2021, granted, now 11,487,060, issued on Nov. 1, 2022.
Prior Publication US 2023/0375783 A1, Nov. 23, 2023
Int. Cl. G02B 6/124 (2006.01); G02B 6/136 (2006.01); H01L 25/16 (2023.01)
CPC G02B 6/124 (2013.01) [G02B 6/136 (2013.01); H01L 25/167 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a photonic die, comprising a grating coupler; and
an optical die, disposed over the photonic die and comprising a substrate having optical nanostructures formed therein,
wherein the optical nanostructures vertically overlap the grating coupler so that an incident radiation of predetermined wavelength passes through the substrate of the optical die before reaching the grating coupler.