CPC G02B 6/1228 (2013.01) [G02B 6/12002 (2013.01); G02B 6/12004 (2013.01); G02B 6/122 (2013.01); G02B 6/13 (2013.01); G02B 2006/12061 (2013.01)] | 20 Claims |
1. A semiconductor structure, comprising:
a semiconductor substrate;
an oxide layer disposed over the semiconductor substrate;
a first dielectric layer disposed on the oxide layer;
a second dielectric layer disposed over and in contact with the first dielectric layer;
a first waveguide disposed in the first dielectric layer and extending lengthwise along a first direction; and
a second waveguide disposed in the second dielectric layer and extending lengthwise along the first direction,
wherein, along the first direction, the first waveguide comprises a non-tapered portion and a tapered portion adjacent the non-tapered portion,
wherein, along the first direction, the second waveguide comprises a non-tapered portion, a tapered portion adjacent the non-tapered portion, and a tip portion adjacent the tapered portion,
wherein the tip portion of the second waveguide vertically overlaps the tapered portion of the first waveguide,
wherein a portion of the second dielectric layer is sandwiched between a top surface of the first waveguide and a bottom surface of the second waveguide,
wherein the taper portion of the second waveguide tapers from the non-tapered portion of the second waveguide toward the tip portion of the second waveguide.
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