US 12,276,686 B2
Apparatus for determination of capacitive and resistive characteristics of access lines
Dan Xu, Sunnyvale, CA (US); Jun Xu, Shanghai (CN); and Erwin E. Yu, San Jose, CA (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed on Aug. 24, 2022, as Appl. No. 17/894,227.
Application 17/894,227 is a continuation of application No. 16/877,710, filed on May 19, 2020, granted, now 11,442,091.
Claims priority of provisional application 62/954,079, filed on Dec. 27, 2019.
Prior Publication US 2022/0404408 A1, Dec. 22, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G01R 27/26 (2006.01); G01R 27/08 (2006.01); G11C 16/04 (2006.01); G11C 16/08 (2006.01)
CPC G01R 27/2605 (2013.01) [G01R 27/08 (2013.01); G11C 16/0483 (2013.01); G11C 16/08 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
an array of memory cells;
a plurality of access lines, wherein each access line of the plurality of access lines is connected to control gates of a respective plurality of memory cells of the array of memory cells; and
a controller for access of the array of memory cells, wherein the controller is configured to cause the apparatus to:
apply a reference current to a selected access line of the plurality of access lines;
determine a time difference between a voltage level of a near end of the selected access line being deemed to exceed a first voltage level while applying the reference current, and the voltage level of the near end of the selected access line being deemed to exceed a second voltage level, higher than the first voltage level, while applying the reference current; and
determine a capacitance value of the selected access line in response to a current level of the reference current, the time difference, and a voltage difference between the second voltage level and the first voltage level.