US 12,276,606 B2
Ultra-spectrally selective terahertz band stop reflector
Anthony C. Terracciano, Orlando, FL (US); Christopher Arose, Orlando, FL (US); and Subith Vasu, Orlando, FL (US)
Assigned to University of Central Florida Research Foundation, Inc., Orlando, FL (US)
Filed by University of Central Florida Research Foundation, Inc., Orlando, FL (US)
Filed on Nov. 24, 2021, as Appl. No. 17/456,493.
Claims priority of provisional application 63/142,078, filed on Jan. 27, 2021.
Prior Publication US 2022/0236177 A1, Jul. 28, 2022
Int. Cl. G01N 21/3581 (2014.01); G01B 11/06 (2006.01)
CPC G01N 21/3581 (2013.01) [G01B 11/0625 (2013.01)] 17 Claims
OG exemplary drawing
 
1. An ultra-spectrally selective terahertz (THz) band stop reflector configured to inhibit the reflectance of electromagnetic radiation in the THz frequency range between 0.1 THz and 10 THz, the reflector comprising:
a substrate having a top surface opposite a bottom surface, the substrate having a thickness measured from the top surface to the bottom surface of between 10 nm and 1 mm;
a top coating applied to the top surface of the substrate, the top coating being an absorber layer having high conductivity and including a conductive element disposed thereon, the conductive element including a conductive region that is surrounded by an absence region that is configured to enable the propagation of THz bands therethrough;
a bottom coating applied to the bottom surface of the substrate, the bottom coating being a backplane layer having high conductivity;
wherein the substrate, the top coating, and the bottom coating form a first layer of the reflector, further comprising a plurality of layers each including a substrate, a top coating, and a bottom coating;
wherein a top layer of the plurality of layers includes an absence region of the top coating having a first area; and
wherein a bottom layer of the plurality of layers includes an absence region of the top coating having a second area, the first area being greater than the second area, thereby enhancing a tuning capacity for attenuation of the THz bands therethrough.