US 12,276,044 B2
Low etch pit density gallium arsenide crystals with boron dopant
Rajaram Shetty, Niskayuna, NY (US); Weiguo Liu, San Leandro, CA (US); and Morris Young, Fremont, CA (US)
Assigned to AXT, Inc., Fremont, CA (US)
Filed by AXT, Inc., Fremont, CA (US)
Filed on Dec. 12, 2019, as Appl. No. 16/711,882.
Claims priority of provisional application 62/779,036, filed on Dec. 13, 2018.
Prior Publication US 2020/0190697 A1, Jun. 18, 2020
Int. Cl. C30B 29/42 (2006.01); C30B 11/00 (2006.01); H01L 29/207 (2006.01); H01L 29/32 (2006.01); H01L 29/36 (2006.01)
CPC C30B 29/42 (2013.01) [C30B 11/002 (2013.01); C30B 11/006 (2013.01); H01L 29/207 (2013.01); H01L 29/32 (2013.01); H01L 29/36 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A gallium arsenide single crystal wafer having a boron as a dopant, an average etch pit density of less than 500 cm−2, and optical absorption of 6 cm−1 or less at 940 nm,
wherein the wafer does not have an intentional dopant other than boron,
including silicon.