US 12,276,043 B2
Silicon carbide ingot and method of fabricating the same
Ching-Shan Lin, Hsinchu (TW)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on Jul. 27, 2021, as Appl. No. 17/385,914.
Claims priority of provisional application 63/139,270, filed on Jan. 19, 2021.
Claims priority of provisional application 63/056,732, filed on Jul. 27, 2020.
Prior Publication US 2022/0025548 A1, Jan. 27, 2022
Int. Cl. C30B 29/36 (2006.01); C01B 32/956 (2017.01); C30B 23/00 (2006.01); C30B 23/06 (2006.01); C30B 25/10 (2006.01); C30B 25/16 (2006.01); H10D 62/60 (2025.01); H10D 62/832 (2025.01)
CPC C30B 29/36 (2013.01) [C01B 32/956 (2017.08); C30B 23/002 (2013.01); C30B 23/066 (2013.01); C30B 25/10 (2013.01); C30B 25/165 (2013.01); H10D 62/60 (2025.01); H10D 62/8325 (2025.01); C01P 2002/52 (2013.01); C01P 2006/10 (2013.01); C01P 2006/40 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A silicon carbide ingot, comprising:
a seed end and a dome end opposite to the seed end, wherein a ratio of vanadium concentration to nitrogen concentration at the seed end is in a range of 5:1 to 11:1, and a ratio of the vanadium concentration to the nitrogen concentration at the dome end is in a range of 2:1 to 11:1, and wherein
the vanadium concentration at the seed end is within a range of 6.3*1017 atoms/cm3 to 9.9*1017 atoms/cm3, and
the vanadium concentration at the dome end is within a range of 1017 atoms/cm3 to 5*1017 atoms/cm3.