US 12,276,040 B2
Single crystal furnace charging system and charging method
Ziyang Ou, Jiangxi (CN); Yin Tang, Jiangxi (CN); Bo Xiong, Jiangxi (CN); and Peng Xiang, Jiangxi (CN)
Assigned to JINKO SOLAR CO., LTD., Jiangxi (CN); and SICHUAN JINKO SOLAR CO., LTD., Sichuan (CN)
Filed by JINKO SOLAR CO., LTD., Jiangxi (CN); and SICHUAN JINKO SOLAR CO., LTD., Leshan (CN)
Filed on Dec. 21, 2022, as Appl. No. 18/069,987.
Claims priority of application No. 202210980899.2 (CN), filed on Aug. 16, 2022.
Prior Publication US 2024/0060207 A1, Feb. 22, 2024
Int. Cl. C30B 15/04 (2006.01); C30B 15/20 (2006.01); C30B 29/06 (2006.01)
CPC C30B 15/04 (2013.01) [C30B 15/20 (2013.01); C30B 29/06 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A single crystal furnace charging system, comprising:
a control system, configured to send a charging request;
a material preparation system, configured to receive the charging request and prepare materials based on the charging request;
a feeding system, including a comparing unit and a charging machine; wherein the feeding system is configured to receive the charging request, obtain the materials prepared by the material preparation system after a first preset time based on the charging request, the comparing unit is configured to compare an actual feeding amount with a preset feeding amount to obtain a difference between the actual feeding amount and the preset feeding amount, and the charging machine is configured to, in response to the difference between the actual feeding amount and the preset feeding amount being within a first preset threshold, charge a single crystal furnace based on the charging request after a second preset time; and
a calibration system, configured to obtain a total charging weight in the single crystal furnace, obtain a difference between the total charging weight and the preset feeding amount of the single crystal furnace, and, in response to the difference between the total charging weight and the preset feeding amount of the single crystal furnace being within a second preset threshold, update a total charging amount in the single crystal furnace to the total charging weight;
wherein the materials include silicon material and a dopant, and the material preparation system includes:
a first control unit, configured to generate a material preparation instruction in response to the charging request;
a feeding machine, configured to store the materials, wherein the feeding machine includes:
a silicon material preparation box, configured to store the silicon material of a preset weight;
a dopant preparation device, including a storage box, wherein the dopant is stored in the storage box, the storage box includes a discharge port, and the dopant is output to the silicon material preparation box through the discharge port; and
a weight measurement element, configured to measure a weight of a dopant to be output in response to the material preparation instruction;
wherein, in response to the weight of the dopant to be output being within a preset weight range, the weight measurement element is further configured to output the dopant to be output to the silicon material preparation box through the discharge port, and
wherein, in response to the weight of the dopant to be output being not within the preset weight range, the weight measurement element is further configured to adjust an amount of the dopant to be output and remeasure the weight of the dopant to be output, until the weight of the dopant to be output falls within the preset weight range.