US 12,276,026 B2
Thin film structure including dielectric material layer, method of manufacturing the same, and electronic device employing the same
Bo-Eun Park, Hwaseong-si (KR); Jooho Lee, Hwaseong-si (KR); Yongsung Kim, Suwon-si (KR); and Jeonggyu Song, Seongnam-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Aug. 25, 2023, as Appl. No. 18/455,941.
Application 18/455,941 is a continuation of application No. 16/827,862, filed on Mar. 24, 2020, granted, now 11,761,089.
Claims priority of application No. 10-2019-0131389 (KR), filed on Oct. 22, 2019.
Prior Publication US 2023/0399749 A1, Dec. 14, 2023
Int. Cl. C23C 16/56 (2006.01); C01G 27/02 (2006.01); C23C 14/08 (2006.01); C23C 14/58 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); H10B 51/00 (2023.01); H10B 53/00 (2023.01)
CPC C23C 16/56 (2013.01) [C01G 27/02 (2013.01); C23C 14/08 (2013.01); C23C 14/5806 (2013.01); C23C 16/40 (2013.01); C23C 16/45525 (2013.01); H10B 51/00 (2023.02); H10B 53/00 (2023.02); C01P 2002/72 (2013.01); C01P 2002/76 (2013.01); C01P 2004/24 (2013.01); C01P 2006/40 (2013.01)] 19 Claims
OG exemplary drawing
 
1. An electronic device comprising:
a first conductive layer including Ti, N and Nb;
a dielectric material layer including a metal oxide including Hf and Zr on the first conductive layer; and
a second conductive layer including Ti and N on the dielectric material layer.