US 12,276,025 B2
Substrate processing apparatus and substrate processing method
Kwang Ryul Kim, Chungcheongnam-do (KR); Yun Sang Kim, Chungcheongnam-do (KR); and Jin Hee Hong, Chungcheongnam-do (KR)
Assigned to SEMES CO., LTD., Chungcheongnam-do (KR)
Filed by SEMES CO., LTD., Chungcheongnam-do (KR)
Filed on Dec. 30, 2022, as Appl. No. 18/092,169.
Claims priority of application No. 10-2022-0081709 (KR), filed on Jul. 4, 2022.
Prior Publication US 2024/0003011 A1, Jan. 4, 2024
Int. Cl. C23C 16/46 (2006.01); C23C 16/455 (2006.01); H01J 37/32 (2006.01)
CPC C23C 16/46 (2013.01) [C23C 16/45544 (2013.01); H01J 37/3244 (2013.01); H01J 37/32458 (2013.01); H01J 37/32724 (2013.01); H01J 2237/332 (2013.01); H01J 2237/334 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A substrate processing apparatus comprising:
a processing chamber having a processing space in which a substrate is plasma-processed, and having a transparent window;
a gas flow unit supplying and discharging process gas to the processing chamber, wherein the gas flow unit comprises a gas feed having a transparent material and disposed between the transparent window and the substrate; and
a laser irradiator irradiating a laser for heating the substrate to be selectively atomic layer-processed for each of a plurality of thin films formed on the substrate through the transparent window from an external space of the processing chamber.