US 12,276,024 B2
Device and methods for chemical vapor deposition
Yung-Tsun Liu, Taipei (TW); Kuang-Wei Cheng, Hsinchu (TW); Sung-Ju Huang, Taipei (TW); Chih-Tsung Lee, Hsinchu (TW); and Chyi-Tsong Ni, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Hsinchu (TW)
Filed on Feb. 15, 2022, as Appl. No. 17/671,965.
Prior Publication US 2023/0257882 A1, Aug. 17, 2023
Int. Cl. C23C 16/455 (2006.01); C23C 16/40 (2006.01)
CPC C23C 16/45565 (2013.01) [C23C 16/401 (2013.01); C23C 16/45591 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A chemical vapor deposition (CVD) method comprising:
introducing at least one process gas into a reaction chamber through a showerhead located above a substrate to be coated;
wherein the showerhead comprises:
a gas inlet feeding into a plenum comprising an upper plate, an outer sidewall, and a lower shower plate having holes therein;
a domed internal baffle plate located within the plenum at a mouth of the gas inlet, the domed internal baffle plate comprising a lip and a domed portion; the domed internal baffle plate comprises a plurality of perforations;
wherein the perforations consist of:
a first zone of perforations consisting of a central hole and a first plurality of holes distributed in a first circle around the central hole having a diameter that is about ⅙ to about ⅕ of a diameter of the domed portion of the domed internal baffle plate;
a second zone of perforations consisting of a second plurality of holes distributed in a second circle around the first circle and having a diameter that is about ¼ to about ½ of the diameter of the domed portion of the domed internal baffle plate; and
a third zone of perforations consisting of a third plurality of holes distributed in a third circle around the second circle and having a diameter that is about ½ to about ¾ of the diameter of the domed portion of the domed internal baffle plate.