US 12,276,022 B2
Alkoxide compound, thin-film forming raw material, and method of producing thin-film
Atsushi Sakurai, Tokyo (JP); Masako Hatase, Tokyo (JP); Nana Okada, Tokyo (JP); and Ryota Fukushima, Tokyo (JP)
Assigned to ADEKA CORPORATION, Tokyo (JP)
Appl. No. 18/014,371
Filed by ADEKA CORPORATION, Tokyo (JP)
PCT Filed Jun. 25, 2021, PCT No. PCT/JP2021/024110
§ 371(c)(1), (2) Date Jan. 4, 2023,
PCT Pub. No. WO2022/009695, PCT Pub. Date Jan. 13, 2022.
Claims priority of application No. 2020-118133 (JP), filed on Jul. 9, 2020.
Prior Publication US 2023/0304154 A1, Sep. 28, 2023
Int. Cl. C23C 16/455 (2006.01); C23C 16/18 (2006.01)
CPC C23C 16/45553 (2013.01) [C23C 16/18 (2013.01)] 1 Claim
 
1. A method for producing a thin-film containing a metal atom or a semimetal atom on the surface of a substrate, comprising:
vaporizing a thin-film forming raw material comprising an alkoxide compound;
introducing the vaporized compound, into a treatment atmosphere; and
subjecting the vaporized compound to decomposition and/or a chemical reaction, to thereby form the thin-film containing a metal atom or a semimetal atom on the surface of the substrate,
wherein the alkoxide compound is represented by the following general formula (1):

OG Complex Work Unit Chemistry
where R1 and R2 each independently represent a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R3 and R4 each independently represent an alkyl group having 1 to 5 carbon atoms, or a fluorine atom-containing alkyl group having 1 to 5 carbon atoms, R5 represents a hydrogen atom, a fluorine atom-containing group, or an alkyl group having 1 to 5 carbon atoms, R6 represents a fluorine atom-containing group, M represents a metal atom or a semimetal atom, and “n” represents a valence of the atom represented by M, provided that when M represents a copper atom, R3 and R4 each independently represent an alkyl group having 1 or 2 carbon atoms, and R5 represents a hydrogen atom.