providing a substrate within a reaction chamber;

forming a silicon-containing layer overlying the substrate using a cyclical process comprising providing only a silicon precursor and an inert gas to the reaction chamber and forming an inert gas plasma using the inert gas;

repeating the cyclical process;

after the step of repeating the cyclical process, depositing a phosphorus-containing layer overlying the substrate, wherein the steps of depositing a silicon-containing layer and depositing a phosphorus-containing layer form a deposited phosphosilicate glass layer;

heating the substrate in a non-oxidizing environment to cause the deposited phosphosilicate glass layer to flow to form a flowed phosphosilicate glass layer; and

oxidizing the flowed phosphosilicate glass layer,

wherein the step of depositing the phosphorus-containing layer comprises flowing a phosphorus-containing precursor and the inert gas to the reaction chamber,

wherein an additional oxidant is not flowed to the reaction chamber during the step of forming the silicon-containing layer,

wherein the silicon precursor is selected from one or more of the group consisting of bis(diethylamino)silane (BDEAS), (dimethylamino)silane (DMAS), bis(dimethylamino)silane (BDMAS), bis(ethylmethylamino)silane (BEMAS), bis(tertbutylamino)silane (BTBAS), tris(dimethylamino)silane (TDMAS), tetrakis(dimethylamino)silane (TKDMAS), and di-isopropylaminosilane (DIPAS),

wherein an additional oxidant is not flowed to the reaction chamber during the step of depositing the phosphorus-containing layer, and

wherein the deposited phosphorus-containing layer comprises P₂O₃.