US 12,276,020 B2
Semiconductor cleaning step
William Zheng, Fujian (CN); Shih-Feng Su, Kaohsiung (TW); Chih-Chien Huang, Tainan (TW); Wen Yi Tan, Fujian (CN); and Ji He Huang, Suzhou (CN)
Assigned to United Semiconductor (Xiamen) Co., Ltd., Fujian (CN)
Filed by United Semiconductor (Xiamen) Co., Ltd., Fujian (CN)
Filed on Jul. 10, 2023, as Appl. No. 18/219,716.
Claims priority of application No. 202310642023.1 (CN), filed on Jun. 1, 2023.
Prior Publication US 2024/0401191 A1, Dec. 5, 2024
Int. Cl. C23C 16/44 (2006.01); C23C 14/56 (2006.01)
CPC C23C 16/4405 (2013.01) [C23C 14/564 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor cleaning process comprising:
providing a chamber, wherein the chamber comprises a bottom surface and a sidewall, and the chamber comprises a heater located on the bottom surface;
placing a wafer on a surface of the heater;
performing a first deposition step to leave a residual layer on the sidewall of the chamber;
performing a carbon deposition step to form a carbon layer on at least one surface of the heater, wherein the wafer is removed out of the chamber after the first deposition step is performed and before the carbon deposition step is performed; and
performing a plasma cleaning step to simultaneously remove the residual layer on the sidewall of the chamber and the carbon layer on the surface of the heater.