US 11,957,070 B2
Semiconductor device, memory cell and method of forming the same
Tung-Ying Lee, Hsinchu (TW); Bo-Jiun Lin, Hsinchu County (TW); Shao-Ming Yu, Hsinchu County (TW); and Yu-Chao Lin, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 6, 2021, as Appl. No. 17/395,471.
Prior Publication US 2023/0045290 A1, Feb. 9, 2023
Int. Cl. H10N 70/00 (2023.01); H01L 23/528 (2006.01); H10B 63/00 (2023.01); H10N 70/20 (2023.01)
CPC H10N 70/826 (2023.02) [H01L 23/5283 (2013.01); H10B 63/80 (2023.02); H10N 70/061 (2023.02); H10N 70/231 (2023.02); H10N 70/841 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory cell, comprising:
a memory device;
a connecting structure, disposed on and electrically connected to the memory device;
an insulating layer, covering the memory device and the connecting structure; and
a selector, located on and electrically connected to the memory device, wherein the selector is disposed on the insulating layer and connected to the connecting structure by penetrating through the insulating layer.