US 11,956,998 B2
Display device including multi-layered buffer layer
Se Wan Son, Yongin-si (KR); Moo Soon Ko, Seoul (KR); Rae Young Gwak, Seoul (KR); Jin Seock Ma, Hwaseong-si (KR); Min Jeong Park, Gumi-si (KR); Ki Bok Yoo, Anyang-si (KR); So La Lee, Hwaseong-si (KR); Jin Goo Jung, Seongnam-si (KR); Jong Won Chae, Asan-si (KR); and Ye Ji Han, Yongin-si (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Filed by SAMSUNG DISPLAY CO., LTD., Yongin-si (KR)
Filed on Jan. 4, 2023, as Appl. No. 18/150,193.
Application 18/150,193 is a continuation of application No. 17/116,922, filed on Dec. 9, 2020, granted, now 11,552,150.
Claims priority of application No. 10-2020-0048808 (KR), filed on Apr. 22, 2020.
Prior Publication US 2023/0157076 A1, May 18, 2023
Int. Cl. H10K 59/121 (2023.01); H10K 50/844 (2023.01); H10K 59/35 (2023.01)
CPC H10K 59/1213 (2023.02) [H10K 50/844 (2023.02); H10K 59/353 (2023.02)] 19 Claims
OG exemplary drawing
 
1. A display device comprising:
a first substrate;
a first buffer layer on the first substrate;
an active layer of a transistor on the first buffer layer;
a first insulating layer on the active layer of the transistor;
a gate electrode of the transistor on the first insulating layer;
a second insulating layer on the gate electrode of the transistor;
a first planarization layer on the second insulating layer;
a first light emitting electrode on the first planarization layer;
a bank covering a part of the first light emitting electrode;
a light emitting layer on an exposed part of the first light emitting electrode that is not covered by the bank;
a second light emitting electrode on the light emitting layer and the bank; and
a first inorganic layer on the second light emitting electrode,
wherein the first buffer layer comprises a first sub-buffer layer on the first substrate and a second sub-buffer layer on and in contact with the first sub-buffer layer,
wherein the first sub-buffer layer is in contact with the first substrate in a transmissive area, and
wherein the second light emitting electrode is in direct contact with the first sub-buffer layer in the transmissive area.