US 11,956,978 B2
Techniques and device structure based upon directional seeding and selective deposition
M. Arif Zeeshan, Manchester, MA (US); Kelvin Chan, San Ramon, CA (US); Shantanu Kallakuri, Ithaca, NY (US); and Sony Varghese, Manchester, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Sep. 3, 2020, as Appl. No. 17/011,729.
Prior Publication US 2022/0068923 A1, Mar. 3, 2022
Int. Cl. C23C 16/04 (2006.01); C23C 14/22 (2006.01); C23C 16/02 (2006.01); C23C 16/455 (2006.01); H10B 99/00 (2023.01); H01L 21/285 (2006.01)
CPC H10B 99/00 (2023.02) [C23C 16/0281 (2013.01); C23C 16/047 (2013.01); C23C 14/221 (2013.01); C23C 14/225 (2013.01); C23C 16/0209 (2013.01); C23C 16/45525 (2013.01); H01L 21/28562 (2013.01)] 13 Claims
OG exemplary drawing
 
1. A method of forming multi-level device contact, comprising:
providing a substrate, the substrate defining a plane of the substrate and having an array of spacer features, disposed over an array of active device features, arranged in a first level; and
directing a reactive beam to the array of spacer features, the reactive beam defining a non-zero angle of incidence with respect to a perpendicular to the plane of the substrate, wherein a seed layer is deposited on a first portion of the array of spacer features, and is not deposited on a second portion of the array of spacer features,
wherein the reactive beam comprises a metallic species, and wherein the seed layer forms an array of staggered contacts, having an S-shape.