US 11,956,969 B2
Semiconductor storage device using two insulative storage elements and neural network device using the same
Toshiyuki Kobayashi, Tokyo (JP)
Assigned to SONY GROUP CORPORATION, Tokyo (JP)
Appl. No. 17/309,597
Filed by SONY GROUP CORPORATION, Tokyo (JP)
PCT Filed Nov. 21, 2019, PCT No. PCT/JP2019/045605
§ 371(c)(1), (2) Date Jun. 9, 2021,
PCT Pub. No. WO2020/129532, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 2018-236001 (JP), filed on Dec. 18, 2018.
Prior Publication US 2022/0020757 A1, Jan. 20, 2022
Int. Cl. H10B 53/30 (2023.01); G06N 3/063 (2023.01); G11C 11/22 (2006.01); G11C 11/54 (2006.01)
CPC H10B 53/30 (2023.02) [G06N 3/063 (2013.01); G11C 11/2275 (2013.01); G11C 11/54 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor storage device, comprising:
a substrate;
a first storage element on the substrate, wherein
the first storage element includes a first insulating film; and
a second storage element on the substrate, wherein
the second storage element includes a second insulating film,
a film thickness of the second insulating film is equal to or greater than 0.5 times and equal to or less than 2 times a film thickness of the first insulating film,
the second storage element is different from the first storage element in power consumption at a time of writing, and
each of the first insulating film and the second insulating film includes a crystalline layer and an amorphous layer.