US 11,956,956 B2
Semiconductor storage device and manufacturing method of the same
Takeshi Narukage, Yokkaichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Mar. 11, 2021, as Appl. No. 17/198,410.
Claims priority of application No. 2020-123481 (JP), filed on Jul. 20, 2020.
Prior Publication US 2022/0020765 A1, Jan. 20, 2022
Int. Cl. H10B 43/27 (2023.01); H10B 43/10 (2023.01); H10B 43/40 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 43/10 (2023.02); H10B 43/40 (2023.02)] 1 Claim
OG exemplary drawing
 
1. A semiconductor storage device comprising:
a stacked body in which a plurality of insulating layers and a plurality of electrically conductive layers are stacked alternately one on another, the stacked body being provided on a predetermined electrically conductive film;
a first pillar portion wherein a plurality of memory cells are formed, the first pillar portion penetrating through the stacked body in a stacking direction of the stacked body;
a first separating portion that separates the stacked body into a plurality of blocks;
a first supporting post that extends locally within the stacked body from an upper surface of the predetermined electrically conductive film in the stacking direction; and
a second supporting post spaced from the predetermined electrically conductive film, the second supporting post extending locally within the stacked body between the first pillar portion and the first separating portion, the second supporting post being deviated from the first supporting post in a direction intersecting the stacking direction.