US 11,956,945 B2
Semiconductor device and fabrication method of the same
Seung Mi Lee, Gyeonggi-do (KR)
Assigned to SK hynix Inc., Gyeonggi-do (KR)
Filed by SK hynix Inc., Gyeonggi-do (KR)
Filed on Jul. 26, 2023, as Appl. No. 18/358,951.
Application 18/358,951 is a continuation of application No. 17/478,147, filed on Sep. 17, 2021, granted, now 11,751,381.
Claims priority of application No. 10-2021-0029507 (KR), filed on Mar. 5, 2021.
Prior Publication US 2023/0371238 A1, Nov. 16, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/315 (2023.02) [H10B 12/0335 (2023.02); H10B 12/34 (2023.02); H10B 12/482 (2023.02)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a bit line structure formed over the substrate;
a storage node contact plug spaced apart from the bit line structure; and
a nitride spacer positioned between the bit line structure and the storage node contact plug,
wherein the nitride spacer has the lowest silicon content in a central portion, and has a higher silicon content in a portion adjacent to the storage node contact plug than in the central portion.