US 11,956,937 B2
Semiconductor device having fin-type pattern with varying widths along a center vertical line thereof
Ki-Il Kim, Suwon-si (KR); Jung-Gun You, Ansan-si (KR); and Gi-Gwan Park, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jan. 24, 2020, as Appl. No. 16/751,460.
Application 16/751,460 is a continuation of application No. 15/213,533, filed on Jul. 19, 2016, abandoned.
Claims priority of provisional application 62/220,472, filed on Sep. 18, 2015.
Claims priority of application No. 10-2015-0152968 (KR), filed on Nov. 2, 2015.
Prior Publication US 2020/0161313 A1, May 21, 2020
Int. Cl. H01L 27/092 (2006.01); H01L 21/8238 (2006.01); H01L 27/105 (2023.01); H01L 29/78 (2006.01); H10B 10/00 (2023.01)
CPC H10B 10/12 (2023.02) [H01L 21/823821 (2013.01); H01L 27/0924 (2013.01); H01L 27/105 (2013.01); H01L 29/7851 (2013.01); H01L 29/7853 (2013.01); H01L 29/7854 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a first fin-type pattern disposed on the substrate, and including a first lower portion and a first protruding portion on the first lower portion;
a second fin-type pattern disposed on the substrate, and including a second lower portion and a second protruding portion on the second lower portion; and
a field insulating film disposed on the substrate and disposed between the first lower portion of the first fin-type pattern and the second lower portion of the second fin-type pattern,
wherein the first protruding portion of the first fin-type pattern protrudes beyond an upper surface of the field insulating film,
wherein the first protruding portion includes a first point, a second point at which the first protruding portion has a first width, and a third point at which the first protruding portion has a second width less than the first width of the first protruding portion,
wherein the second point of the first protruding portion is higher than the third point of the first protruding portion, and the first point of the first protruding portion is higher than the second point of the first protruding portion,
wherein a maximum width of the first protruding portion is a width at a first boundary between the first protruding portion and the first lower portion,
wherein a first portion, between the second point and an uppermost end of the first protruding portion, of the first protruding portion is a decreasing width in a vertical direction along which a distance from an upper surface of the substrate increases,
wherein a second portion, between the third point and the second point, of the first protruding portion is an increasing width in the vertical direction,
wherein a third portion, between the first boundary and third point, of the first protruding portion has a decreasing width in the vertical direction,
wherein the second point of the first protruding portion is at a boundary between the first and second portions of the first protruding portion, and the third point of the first protruding portion is at a boundary between the second and third portions of the first protruding portion,
wherein the second protruding portion of the second fin-type pattern protrudes beyond the upper surface of the field insulating film,
wherein the second protruding portion includes a first point, a second point at which the second protruding portion has a third width, and a third point at which the second protruding portion has a fourth width less than the third width of the second protruding portion,
wherein the second point of the second protruding portion is higher than the third point of the second protruding portion, and the first point of the second protruding portion is higher than the second point of the second protruding portion,
wherein a maximum width of the second protruding portion is a width at a second boundary between the second protruding portion and the second lower portion,
wherein a first portion, between the second point and an uppermost end of the second protruding portion, of the second protruding portion is a decreasing width in the vertical direction,
wherein a second portion, between the third point and the second point, of the second protruding portion is an increasing width in the vertical direction,
wherein a third portion, between the second boundary and the third point, of the second protruding portion has a decreasing width in the vertical direction,
wherein the second point of the second protruding portion is at a boundary between the first and second portions of the second protruding portion, and the third point of the second protruding portion is at a boundary between the second and third portions of the second protruding portion,
wherein a maximum width of the first lower portion of the first fin-type pattern is greater than the maximum width of the first protruding portion at the first boundary,
wherein the first lower portion has a decreasing width in the vertical direction,
wherein a maximum width of the second lower portion of the second fin-type pattern is greater than the maximum width of the second protruding portion at the second boundary,
wherein the second lower portion has a decreasing width in the vertical direction,
wherein the first lower portion and the first protruding portion are formed of the same material, and
wherein the second lower portion and the second protruding portion are formed of the same material.