US 11,955,959 B2
Parallel driving device and power conversion device
Yasushi Nakayama, Tokyo (JP); Yoshiko Tamada, Tokyo (JP); Takayoshi Miki, Tokyo (JP); Shota Morisaki, Tokyo (JP); Yukio Nakashima, Tokyo (JP); Kenta Uchida, Tokyo (JP); Keisuke Kimura, Tokyo (JP); and Tomonobu Mihara, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/613,697
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed May 29, 2019, PCT No. PCT/JP2019/021404
§ 371(c)(1), (2) Date Nov. 23, 2021,
PCT Pub. No. WO2020/240744, PCT Pub. Date Dec. 3, 2020.
Prior Publication US 2022/0231595 A1, Jul. 21, 2022
Int. Cl. H03K 17/14 (2006.01); H03K 17/04 (2006.01); H03K 17/0412 (2006.01); H03K 17/28 (2006.01); H02M 1/088 (2006.01)
CPC H03K 17/14 (2013.01) [H03K 17/04 (2013.01); H03K 17/0412 (2013.01); H03K 17/28 (2013.01); H02M 1/088 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A parallel driving device to drive a plurality of parallel-connected semiconductor elements, the parallel driving device comprising:
a controller to detect a temperature difference between the semiconductor elements on a basis of detected values provided by temperature sensors, the temperature sensors detecting temperatures of the individual semiconductor elements, and to generate a control signal for changing a timing at which to turn on a first semiconductor element specified from the semiconductor elements on the basis of the temperature difference; and
a driving circuit to generate a first driving signal for driving the semiconductor elements, and to generate a second driving signal that is the first driving signal delayed on the basis of the control signal and apply the second driving signal to the first semiconductor element, wherein
the driving circuit is a driving circuit having a voltage variable function or a constant-current driving circuit.