US 11,955,946 B2
Tunable bandpass filter for millimeter-wave signals
Shiban K. Koul, Delhi (IN); Ajay Kumar Poddar, Elmwood Park, NJ (US); Sukomal Dey, Palakkad District (IN); and Ulrich L. Rohde, Upper Saddle River, NJ (US)
Assigned to Synergy Microwave Corporation, Paterson, NJ (US)
Filed by Synergy Microwave Corporation, Paterson, NJ (US)
Filed on Apr. 5, 2021, as Appl. No. 17/221,920.
Claims priority of provisional application 63/066,916, filed on Aug. 18, 2020.
Prior Publication US 2022/0060163 A1, Feb. 24, 2022
Int. Cl. H03H 7/12 (2006.01); H03F 3/19 (2006.01); H03H 7/01 (2006.01); H03H 9/64 (2006.01); H03H 7/00 (2006.01); H03H 15/00 (2006.01)
CPC H03H 7/12 (2013.01) [H03F 3/19 (2013.01); H03H 7/0115 (2013.01); H03H 7/0161 (2013.01); H03H 9/6403 (2013.01); H03H 2007/006 (2013.01); H03H 2015/005 (2013.01)] 43 Claims
OG exemplary drawing
 
1. A tunable passband filter comprising:
a signal input port configured to receiving an input radio frequency (RF) signal;
a signal output port configured to transmit a filtered output RF signal, wherein the tunable passband filter is configured to filter the input RF signal to yield the filtered output RF signal;
a first high-pass section comprising a first tunable microelectromechanical system (MEMS) switch array and configured to receive the input RF signal from the signal input port, wherein the first tunable MEMS switch array comprises a first plurality of MEMS switches arranged in parallel between a first switch array input junction and a first switch array output junction;
a second high-pass section comprising a second tunable MEMS switch array and configured to transmit the output RF signal to the signal output port, wherein the second tunable MEMS switch array comprises a second plurality of MEMS switches arranged in parallel between a second switch array input junction and a second switch array output junction; and
a low pass section operatively coupled between the first high-pass section and the second high-pass section, and comprising a first tunable MEMS bridge array, a second tunable MEMS bridge array, and a high impedance line, wherein the first tunable MEMS bridge array comprises a first plurality of fixed MEMS bridges arranged in series between the first switch array output junction and a first end of the high impedance line, and wherein the second tunable MEMS bridge array comprises a second plurality of fixed MEMS bridges arranged in series between the second switch array input junction and a second end of the high impedance line.