US 11,955,774 B2
Elliptical multi-mesa laser structure
Hui Li, Shenzhen (CN); Jian Feng, Shenzhen (CN); Chuyu Zhong, Shenzhen (CN); Wei Miao, Shenzhen (CN); Shilong Zhao, Shenzhen (CN); and Zhao Chen, Shenzhen (CN)
Assigned to SHENZHEN TECHNOLOGY UNIVERSITY, Shenzhen (CN)
Filed by Shenzhen Technology University, Shenzhen (CN)
Filed on Jul. 1, 2023, as Appl. No. 18/346,206.
Claims priority of application No. 202211014903.6 (CN), filed on Aug. 23, 2022.
Prior Publication US 2024/0072517 A1, Feb. 29, 2024
Int. Cl. H01S 5/183 (2006.01); H01S 5/30 (2006.01)
CPC H01S 5/1835 (2013.01) [H01S 5/18313 (2013.01); H01S 5/1833 (2013.01); H01S 5/18347 (2013.01); H01S 5/3013 (2013.01)] 5 Claims
OG exemplary drawing
 
1. An elliptical multi-mesa laser structure, comprising:
a substrate layer, wherein an N contact layer is fixedly connected to the substrate layer;
an N-DBR, wherein the N-DBR is fixedly connected to a top of the substrate layer, and the N contact layer is arranged around the N-DBR; and a space layer is inserted into the N-DBR;
a functional layer, wherein the functional layer is fixedly connected to a top of the N-DBR; and
a P-DBR, wherein the P-DBR is fixedly connected to a top of the functional layer, and a top of the P-DBR is fixedly connected to a P contact layer; and another the space layer is inserted into the P-DBR;
wherein the functional layer comprises a confinement layer group fixedly connected to the N-DBR, wherein a top of the confinement layer group is fixedly connected to the P-DBR; and an active layer is embedded and fixedly connected in the confinement layer group;
the confinement layer group comprises an upper oxidation confinement layer group and a lower oxidation confinement layer group respectively fixedly connected on upper and lower end faces of the active layer; a bottom of the lower oxidation confinement layer group is fixedly connected to a top surface of the N-DBR, and a top surface of the upper oxidation confinement layer group is fixedly connected to a bottom surface of the P-DBR; and
the upper oxidation confinement layer group and the lower oxidation confinement layer group each comprise several Al GaAs oxide layers where x is in a range of 0.94-1, and the upper oxidation confinement layer group and the lower oxidation confinement layer group are symmetrically arranged with respect to the active layer.