US 11,955,633 B2
Positive electrode material and preparation method and usage thereof
Chongheng Shen, Ningde (CN); Rui Du, Ningde (CN); Yongchao Liu, Ningde (CN); Deyu Zhao, Ningde (CN); and Na Liu, Ningde (CN)
Assigned to CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED, Ningde (CN)
Filed by CONTEMPORARY AMPEREX TECHNOLOGY CO. LIMITED, Ningde (CN)
Filed on Nov. 3, 2021, as Appl. No. 17/517,958.
Application 17/517,958 is a continuation of application No. PCT/CN2020/084339, filed on Apr. 11, 2020.
Claims priority of application No. 201910578163.0 (CN), filed on Jun. 28, 2019.
Prior Publication US 2022/0059837 A1, Feb. 24, 2022
Int. Cl. H01M 4/525 (2010.01); H01M 4/36 (2006.01); H01M 4/505 (2010.01); H01M 4/02 (2006.01)
CPC H01M 4/525 (2013.01) [H01M 4/366 (2013.01); H01M 4/505 (2013.01); H01M 2004/028 (2013.01)] 16 Claims
 
1. A positive electrode material, comprising a substrate,
wherein a general formula of the substrate is LixNiyCozMkMepOrAm, wherein 0.95≤x≤1.05, 0.5≤y≤1, 0≤z≤1, 0≤k≤1, 0≤p≤0.1, 1≤r≤5.2, 0≤m≤2, m+r≤2, M is selected from Mn and/or Al, Me is selected from one or more of Zr, Zn, Cu, Cr, Mg, Fe, V, Ti, Sr, Sb, Y, W, and Nb, and A is selected from one or more of N, F, S, and Cl; and
an oxygen defect level of the positive electrode material satisfies at least one of condition (1) and condition (2):
(1) 1.77≤OD1≤1.90, wherein OD1=(I101/I012)0.5, I101 represents XRD diffraction peak intensity of the (101) crystal plane of the positive electrode material in an XRD pattern, and I012 represents diffraction peak intensity of the (012) crystal plane of the positive electrode material in the XRD pattern; and
(2) 0.69≤OD2≤0.74, wherein OD2=(I101/I104)0.5, I101 represents the XRD diffraction peak intensity of the (101) crystal plane of the positive electrode material in the XRD pattern, and 1104 represents diffraction peak intensity of the (104) crystal plane of the positive electrode material in the XRD pattern; wherein a mean microstress (MMS) of the positive electrode material ranges from 0.03 to 0.20, wherein MMS=(βhkl·cot θhkl/4, βhkl represents a half-peak width of a characteristic diffraction peak (hkl) in the XRD pattern of the positive electrode material, and θhkl represents a diffraction angle corresponding to the characteristic diffraction peak (hkl) in the XRD pattern of the positive electrode material.