US 11,955,583 B2
Flip chip micro light emitting diodes
Yeow Meng Teo, Singapore (SG); Wee-Hong Ng, Singapore (SG); Pei-Chee Mah, Singapore (SG); Chee Chung James Wong, Singapore (SG); and Geok Joo Soh, Singapore (SG)
Assigned to Lumileds LLC, San Jose, CA (US)
Filed by Lumileds LLC, San Jose, CA (US)
Filed on Mar. 26, 2021, as Appl. No. 17/213,388.
Claims priority of provisional application 63/119,743, filed on Dec. 1, 2020.
Prior Publication US 2022/0173276 A1, Jun. 2, 2022
Int. Cl. H01L 33/38 (2010.01); H01L 25/075 (2006.01); H01L 33/20 (2010.01); H01L 33/32 (2010.01)
CPC H01L 33/385 (2013.01) [H01L 25/0753 (2013.01); H01L 33/20 (2013.01); H01L 33/32 (2013.01)] 21 Claims
OG exemplary drawing
 
1. A micro-light emitting diode (uLED) comprising:
a mesa comprising:
a plurality of semiconductor layers including an n-type layer, an active layer, and a p-type layer;
a p-contact layer contacting the p-type layer;
the mesa comprising a height spanning from a top surface of the p-contact layer to a bottom surface of the n-type layer and a width spanning a first sidewall of the n-type layer to a second sidewall of the n-type layer; the top surface of the p-contact layer having a different planar orientation compared to the first and second sidewalls of the n-type layer;
a cathode contacting the first sidewall of the n-type layer;
a first region of dielectric material that insulates the p-contact layer, the active layer, and a first sidewall of the p-type layer from the cathode;
an anode contacting the top surface of the p-contact layer; and
a second region of dielectric material that insulates the active layer, a second sidewall of the p-type layer, and the second sidewall of the n-type layer from the anode;
the cathode and the anode longitudinally spanning the uLED.