US 11,955,582 B2
Light emitting apparatus and projector
Hiroyuki Shimada, Chuo (JP); and Katsumi Kishino, Akiruno (JP)
Assigned to SEIKO EPSON CORPORATION, (JP); and SOPHIA SCHOOL CORPORATION, (JP)
Filed by Seiko Epson Corporation, Tokyo (JP); and Sophia School Corporation, Tokyo (JP)
Filed on Feb. 26, 2021, as Appl. No. 17/186,080.
Claims priority of application No. 2020-031339 (JP), filed on Feb. 27, 2020.
Prior Publication US 2021/0273135 A1, Sep. 2, 2021
Int. Cl. H01L 33/32 (2010.01); G03B 21/20 (2006.01); H01L 33/38 (2010.01); H01L 33/54 (2010.01)
CPC H01L 33/32 (2013.01) [G03B 21/2033 (2013.01); H01L 33/38 (2013.01); H01L 33/54 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A light emitting apparatus comprising:
a substrate;
a laminated structure provided at the substrate and including a plurality of columnar sections; and
an electrode provided on a side opposite the substrate with respect to the laminated structure and injecting current into the laminated structure,
wherein the columnar sections each include
an n-type first GaN layer,
a p-type second GaN layer, and
a light emitting layer provided between the n-type first GaN layer and the p-type second GaN layer,
the n-type first GaN layers are provided between the light emitting layers and the substrate,
the laminated structure includes a p-type first AlGaN layer, and
the p-type first AlGaN layer includes
a first section provided between the p-type second GaN layers of the columnar sections adjacent to each other,
a second section provided between the first section and the electrode and between the columnar sections and the electrode, and
an entirety of each of the n-type first GaN layer, the light emitting layer, and the p-type second GaN layer are axially aligned in a direction from the substrate to the electrode.