US 11,955,580 B2
Quantum dot light emitting diode, preparation method thereof, and composite material
Chaoyu Xiang, Huizhou (CN); Xiongzhi Wang, Huizhou (CN); Le Li, Huizhou (CN); Tao Zhang, Huizhou (CN); Zhenghang Xin, Huizhou (CN); and Xue Li, Huizhou (CN)
Assigned to TCL TECHNOLOGY GROUP CORPORATION, Huizhou (CN)
Appl. No. 16/954,465
Filed by TCL TECHNOLOGY GROUP CORPORATION, Huizhou (CN)
PCT Filed Dec. 29, 2018, PCT No. PCT/CN2018/125202
§ 371(c)(1), (2) Date Jun. 16, 2020,
PCT Pub. No. WO2019/129256, PCT Pub. Date Jul. 4, 2019.
Claims priority of application No. 201711468582.6 (CN), filed on Dec. 29, 2017; application No. 201711468616.1 (CN), filed on Dec. 29, 2017; application No. 201711468692.2 (CN), filed on Dec. 29, 2017; and application No. 201711468934.8 (CN), filed on Dec. 29, 2017.
Prior Publication US 2021/0083144 A1, Mar. 18, 2021
Int. Cl. H01L 33/06 (2010.01); H01L 33/14 (2010.01)
CPC H01L 33/06 (2013.01) [H01L 33/14 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A quantum dot Light Emitting Diode, comprising an anode, a cathode and a quantum dot light-emitting layer between the anode and the cathode, a carrier functional layer being arranged between the anode and the cathode, wherein the carrier functional layer contains a composite material of a magnetic material and a carrier functional material; and
wherein the magnetic material is coated on a surface of the carrier functional material to form a core-shell structure of which an inner core is the carrier functional material and a shell is the magnetic material.