US 11,955,578 B2
Optoelectronic apparatus and method of manufacturing the same
Jong Won Chung, Hwaseong-si (KR); Sukho Choi, Yongin-si (KR); Sung Heo, Suwon-si (KR); Sung Kim, Yongin-si (KR); and YongChul Kim, Seoul (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do (KR); and UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Gyeonggi-Do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR); and UNIVERSITY-INDUSTRY COOPERATION GROUP OF KYUNG HEE UNIVERSITY, Yongin-si (KR)
Filed on Sep. 30, 2020, as Appl. No. 17/037,859.
Claims priority of application No. 10-2019-0145396 (KR), filed on Nov. 13, 2019.
Prior Publication US 2021/0143287 A1, May 13, 2021
Int. Cl. H01L 33/26 (2010.01); H01L 33/00 (2010.01)
CPC H01L 33/005 (2013.01) [H01L 33/26 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An optoelectronic apparatus comprising:
an optoelectronic diode comprising a first electrode, a second electrode, and a photoelectric conversion layer interposed between the first electrode and the second electrode;
a first driving part; and
a second driving part,
wherein each of the first driving part and the second driving part is electrically connected to the optoelectronic diode,
the optoelectronic diode is driven by the first driving part in a light-receiving mode,
the optoelectronic diode is driven by the second driving part in a light-emitting mode, and
wherein the photoelectric conversion layer comprises a first layer including a three-dimensional perovskite and a second layer including a two-dimensional perovskite.