US 11,955,563 B2
Thin film transistor, manufacturing method of thin film transistor, and liquid crystal display
Mingjuan Li, Hubei (CN)
Assigned to WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Hubei (CN)
Appl. No. 16/972,621
Filed by WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD., Hubei (CN)
PCT Filed Mar. 29, 2019, PCT No. PCT/CN2019/080355
§ 371(c)(1), (2) Date Dec. 7, 2020,
PCT Pub. No. WO2020/124855, PCT Pub. Date Jun. 25, 2020.
Claims priority of application No. 201811568574.3 (CN), filed on Dec. 21, 2018.
Prior Publication US 2021/0242350 A1, Aug. 5, 2021
Int. Cl. H01L 29/786 (2006.01); G02F 1/1368 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78696 (2013.01) [G02F 1/1368 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78651 (2013.01)] 11 Claims
OG exemplary drawing
 
1. A thin film transistor, comprising:
a substrate;
an active region arranged above the substrate;
a channel region arranged in a center of the active region;
source and drain regions arranged on two sides of the channel region;
a gate dielectric layer arranged above the channel region;
a reflective coating arranged above the gate dielectric layer;
a gate metal arranged above the reflective coating;
an interlayer dielectric layer covering the gate metal, the active region, and the substrate; and
a source/drain metal layer passing through the interlayer dielectric layer and electrically connecting with a surface of the source and drain regions;
wherein the reflective coating and the gate metal are different layers;
wherein the reflective coating is a metal with a mirror surface structure.