US 11,955,562 B2
Semiconductor device and method for manufacturing semiconductor device
Shunpei Yamazaki, Setagaya (JP); Haruyuki Baba, Isehara (JP); Naoki Okuno, Yamato (JP); Yoshihiro Komatsu, Ebina (JP); and Toshikazu Ohno, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Aug. 17, 2022, as Appl. No. 17/889,597.
Application 17/889,597 is a continuation of application No. 17/256,341, granted, now 11,424,369, previously published as PCT/IB2019/055318, filed on Jun. 25, 2019.
Claims priority of application No. 2018-129050 (JP), filed on Jul. 6, 2018; application No. 2018-132300 (JP), filed on Jul. 12, 2018; application No. 2018-156319 (JP), filed on Aug. 23, 2018; application No. 2018-168236 (JP), filed on Sep. 7, 2018; application No. 2018-224773 (JP), filed on Nov. 30, 2018; application No. 2019-030032 (JP), filed on Feb. 22, 2019; and application No. 2019-042602 (JP), filed on Mar. 8, 2019.
Prior Publication US 2023/0073146 A1, Mar. 9, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01)
CPC H01L 29/7869 (2013.01) [H01L 29/4966 (2013.01); H01L 29/517 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first insulator;
a first oxide over the first insulator;
a second oxide over and in contact with the first oxide;
a first conductor over the second oxide;
a second conductor over the second oxide;
a second insulator covering the first oxide, the second oxide, the first conductor, and the second conductor;
a third insulator over the second insulator;
a third oxide over the second oxide, the third oxide being provided in an opening of the third insulator;
a fourth insulator over the third oxide; and
a third conductor over the third insulator,
wherein the third oxide is in contact with a top surface of the second oxide, a first side surface of the first conductor and a first side surface of the second conductor,
wherein the third oxide is in contact with a side surface of the third insulator in the opening,
wherein the second oxide comprises In, an element M, and Zn, where the element M is Al, Ga, Y, or Sn,
wherein the second insulator is in contact with a top surface of the first conductor, a top surface of the second conductor, a second side surface of the first conductor, a second side surface of the second conductor, a side surface of the second oxide, and a side surface of the first oxide, and
wherein the third oxide comprises aluminum.