US 11,955,554 B2
Method of fabricating a multi-gate device
Huan-Sheng Wei, Taipei (TW); Hung-Li Chiang, Taipei (TW); Chia-Wen Liu, Taipei (TW); Yi-Ming Sheu, Hsinchu (TW); Zhiqiang Wu, Hsinchu County (TW); Chung-Cheng Wu, Hsin-Chu (TW); and Ying-Keung Leung, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Jul. 15, 2022, as Appl. No. 17/812,997.
Application 16/016,748 is a division of application No. 15/355,844, filed on Nov. 18, 2016, granted, now 10,008,603, issued on Jun. 26, 2018.
Application 17/812,997 is a continuation of application No. 16/696,845, filed on Nov. 26, 2019, granted, now 11,393,926.
Application 16/696,845 is a continuation of application No. 16/016,748, filed on Jun. 25, 2018, granted, now 11,145,762, issued on Oct. 12, 2021.
Prior Publication US 2022/0359754 A1, Nov. 10, 2022
Int. Cl. H01L 29/78 (2006.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 21/311 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/165 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/7851 (2013.01) [H01L 21/02236 (2013.01); H01L 21/02532 (2013.01); H01L 21/30604 (2013.01); H01L 21/31111 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01); H01L 29/7848 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabrication of a multi-gate semiconductor device, comprising:
providing a fin having a plurality of a first type of epitaxial layers and a plurality of a second type of epitaxial layers;
forming a gate stack over a channel region of the fin;
oxidizing each of the plurality of the second type of epitaxial layers in a source/drain region of the fin, wherein the oxidizing forms a plurality of oxide layers, an oxide layer of the plurality of oxide layers interposing each of the plurality of the first type of epitaxial layers; and
after oxidizing, growing a source/drain epitaxial layer on the source/drain region of the fin.