US 11,955,553 B2
Source/drain structure
Su-Hao Liu, Jhongpu Township (TW); Kuo-Ju Chen, Taichung (TW); Wen-Yen Chen, Hsinchu (TW); Ying-Lang Wang, Tien-Chung Village (TW); Liang-Yin Chen, Hsinchu (TW); Li-Ting Wang, Hsinchu (TW); and Huicheng Chang, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 24, 2023, as Appl. No. 18/174,045.
Application 16/876,436 is a division of application No. 16/020,443, filed on Jun. 27, 2018, granted, now 10,658,510, issued on May 19, 2020.
Application 18/174,045 is a continuation of application No. 17/651,437, filed on Feb. 17, 2022, granted, now 11,594,636.
Application 17/651,437 is a continuation of application No. 16/876,436, filed on May 18, 2020, granted, now 11,257,952, issued on Feb. 22, 2022.
Prior Publication US 2023/0197852 A1, Jun. 22, 2023
Int. Cl. H01L 21/24 (2006.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); H01L 21/768 (2006.01); H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/785 (2013.01) [H01L 21/02694 (2013.01); H01L 21/324 (2013.01); H01L 21/76829 (2013.01); H01L 21/823814 (2013.01); H01L 21/823864 (2013.01); H01L 29/6681 (2013.01)] 20 Claims
OG exemplary drawing
 
11. A method of forming a semiconductor device, the method comprising:
forming a doped active region on a substrate, the doped active region including a first region having a first germanium concentration and a second region having a second germanium concentration, the first germanium concentration being greater than the second germanium concentration, the first region being over the second region;
forming a dielectric layer over the doped active region;
forming an opening through the dielectric layer to expose an exposed region of the first region of the doped active region;
implanting a first dopant into the exposed region, wherein the first dopant has a larger molecule size than a molecule of a material of the doped active region;
after implanting the first dopant, implanting at least a second dopant comprising a p-type dopant or an n-type dopant into the doped active region containing the first dopant;
performing a plurality of anneal processes;
after performing the plurality of anneal processes, forming a silicide region at an upper surface of the exposed region; and
forming a conductive feature in the opening to the silicide region.