US 11,955,545 B2
Semiconductor device and method of manufacturing the same
Tomonari Shioda, Yokkaichi (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Feb. 4, 2022, as Appl. No. 17/665,031.
Claims priority of application No. 2021-152533 (JP), filed on Sep. 17, 2021.
Prior Publication US 2023/0087572 A1, Mar. 23, 2023
Int. Cl. H01L 29/78 (2006.01); H01L 29/66 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01)
CPC H01L 29/7827 (2013.01) [H01L 29/66666 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a first semiconductor layer provided on the substrate and including a first crystal grain;
a first film provided on a surface of the first semiconductor layer; and
a second semiconductor layer provided on a surface of the first film, and provided on the surface of the first semiconductor layer via an opening in the first film, the second semiconductor layer including a second crystal grain and being included in a memory cell,
wherein a grain size of the second crystal grain is larger than a maximum value of a width of the second semiconductor layer in the opening in a direction parallel to a surface of the substrate.