US 11,955,541 B2
Semiconductor device and method for forming the same
Chi-Hsiao Chen, Chiayi (TW); and Kai-Lin Lee, Kinmen County (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on May 31, 2021, as Appl. No. 17/335,026.
Claims priority of application No. 202110423761.8 (CN), filed on Apr. 20, 2021.
Prior Publication US 2022/0336650 A1, Oct. 20, 2022
Int. Cl. H01L 29/778 (2006.01); H01L 29/06 (2006.01); H01L 29/20 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/7786 (2013.01) [H01L 29/0642 (2013.01); H01L 29/2003 (2013.01); H01L 29/66462 (2013.01)] 8 Claims
OG exemplary drawing
 
1. A method for forming a semiconductor device, comprising:
providing a substrate;
forming a buffer layer on the substrate;
forming a channel layer on the buffer layer;
forming a barrier layer on the buffer layer;
forming a first semiconductor gate layer on the barrier layer;
forming a passivation layer on the barrier layer and covering a top surface and sidewalls of the first semiconductor gate layer; and
performing an ion implantation process to form a device isolation region, wherein the device isolation region encloses a first device region of the semiconductor device and extends through the passivation layer and the barrier layer and into at least a portion of the channel layer, a damage concentration of the device isolation region varies along a depth direction, and a depth range of a highest damage concentration covers a depth range of a two-dimensional electron gas layer at a junction between the barrier layer and the channel layer.