US 11,955,538 B2
Semiconductor device and method for manufacturing semiconductor device
Shunpei Yamazaki, Tokyo (JP); Toshihiko Takeuchi, Kanagawa (JP); Naoto Yamade, Kanagawa (JP); Hiroshi Fujiki, Yamaguchi (JP); Tomoaki Moriwaka, Kanagawa (JP); and Shunsuke Kimura, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Apr. 18, 2023, as Appl. No. 18/135,793.
Application 18/135,793 is a continuation of application No. 17/176,211, filed on Feb. 16, 2021, granted, now 11,670,705.
Application 17/176,211 is a continuation of application No. 16/492,282, granted, now 11,004,961, issued on May 11, 2021, previously published as PCT/IB2018/051253, filed on Feb. 28, 2018.
Claims priority of application No. 2017-047420 (JP), filed on Mar. 13, 2017; and application No. 2017-072177 (JP), filed on Mar. 31, 2017.
Prior Publication US 2023/0299183 A1, Sep. 21, 2023
Int. Cl. H01L 29/66 (2006.01); H01L 29/10 (2006.01); H01L 29/49 (2006.01)
CPC H01L 29/66969 (2013.01) [H01L 29/1054 (2013.01); H01L 29/4966 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first transistor;
a second transistor; and
a capacitor, the capacitor comprising:
a first electrode, the first electrode being part of an oxide of which a part functions as a first channel formation region of the first transistor;
an insulator over the first electrode; and
a second electrode, the second electrode being a first conductor provided over the insulator and the first channel formation region,
wherein the first electrode is electrically connected to the second transistor, and
wherein the second transistor comprises silicon in a second channel formation region.