US 11,955,537 B2
Semiconductor device and method for manufacturing the same
Hajime Kimura, Atsugi (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed on Aug. 26, 2022, as Appl. No. 17/896,211.
Application 14/307,675 is a division of application No. 13/909,422, filed on Jun. 4, 2013, granted, now 8,759,206, issued on Jun. 24, 2014.
Application 13/909,422 is a division of application No. 12/711,674, filed on Feb. 24, 2010, granted, now 8,461,582, issued on Jun. 11, 2013.
Application 17/896,211 is a continuation of application No. 16/902,067, filed on Jun. 15, 2020, abandoned.
Application 16/902,067 is a continuation of application No. 16/440,260, filed on Jun. 13, 2019, granted, now 10,686,061, issued on Jun. 16, 2020.
Application 16/440,260 is a continuation of application No. 15/912,900, filed on Mar. 6, 2018, granted, now 10,326,008, issued on Jun. 18, 2019.
Application 15/912,900 is a continuation of application No. 14/307,675, filed on Jun. 18, 2014, granted, now 9,941,393, issued on Apr. 10, 2018.
Claims priority of application No. 2009-051857 (JP), filed on Mar. 5, 2009.
Prior Publication US 2022/0416060 A1, Dec. 29, 2022
Int. Cl. H01L 27/12 (2006.01); H01L 29/26 (2006.01); H01L 29/45 (2006.01); H01L 29/49 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/66969 (2013.01) [H01L 27/1214 (2013.01); H01L 27/1225 (2013.01); H01L 27/124 (2013.01); H01L 27/1288 (2013.01); H01L 29/26 (2013.01); H01L 29/458 (2013.01); H01L 29/4908 (2013.01); H01L 29/78633 (2013.01); H01L 29/7869 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A display device comprising:
a first conductive layer;
a second conductive layer;
an oxide semiconductor layer over and in contact with the first conductive layer and the second conductive layer, the oxide semiconductor layer comprising a channel formation region of a first transistor;
a third conductive layer over the oxide semiconductor layer, the third conductive layer comprising a gate electrode of the first transistor;
a first insulating layer over the third conductive layer;
a fourth conductive layer over the first insulating layer, the fourth conductive layer being electrically connected to the second conductive layer;
a fifth conductive layer electrically connected to the fourth conductive layer, the fifth conductive layer comprising a first electrode of a capacitor;
a sixth conductive layer comprising a second electrode of the capacitor under the fifth conductive layer; and
a seventh conductive layer comprising a power supply line,
wherein the first insulating layer is over the fifth conductive layer, and
wherein the sixth conductive layer is electrically connected to the seventh conductive layer.