US 11,955,525 B2
Semiconductor device and method of forming the same
Junghwan Huh, Suwon-si (KR); Dongchan Kim, Suwon-si (KR); Dae Hyun Kim, Suwon-si (KR); Euiju Kim, Suwon-si (KR); and Jisoo Lee, Suwon-si (KR)
Assigned to SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 9, 2022, as Appl. No. 17/941,828.
Application 17/941,828 is a continuation of application No. 17/222,474, filed on Apr. 5, 2021, granted, now 11,462,623.
Application 17/222,474 is a continuation of application No. 16/523,529, filed on Jul. 26, 2019, granted, now 10,985,255, issued on Apr. 20, 2021.
Claims priority of application No. 10-2018-0137205 (KR), filed on Nov. 9, 2018.
Prior Publication US 2023/0006046 A1, Jan. 5, 2023
Int. Cl. H01L 29/423 (2006.01); H01L 21/768 (2006.01); H01L 21/8234 (2006.01); H01L 29/49 (2006.01); H01L 29/51 (2006.01); H01L 29/78 (2006.01)
CPC H01L 29/4236 (2013.01) [H01L 21/76877 (2013.01); H01L 21/823437 (2013.01); H01L 21/82345 (2013.01); H01L 29/42364 (2013.01); H01L 29/4916 (2013.01); H01L 29/518 (2013.01); H01L 29/78 (2013.01); H01L 29/7827 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate;
a gate trench in the substrate;
a gate insulating film in the gate trench;
a titanium nitride (TiN)-lower gate electrode film on the gate insulating film, the titanium nitride (TiN)-lower gate electrode film including a top surface, a first side surface, and a second side surface opposite the first side surface;
a polysilicon-upper gate electrode film on the titanium nitride (TiN)-lower gate electrode film; and
a gate capping film on the polysilicon-upper gate electrode film,
wherein a center portion of the top surface of the titanium nitride (TiN)-lower gate electrode film overlaps a center portion of the polysilicon-upper gate electrode film in a direction that is perpendicular to a top surface of the substrate,
each of the first side surface and the second side surface of the titanium nitride (TiN)-lower gate electrode film is connected to the gate insulating film,
a top surface of the polysilicon-upper gate electrode film is concave, and
a bottom surface of the gate capping film is convex.