| CPC H01L 29/0673 (2013.01) [H01L 21/823481 (2013.01); H01L 29/4236 (2013.01); H01L 29/6656 (2013.01)] | 20 Claims |
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1. A method for manufacturing a semiconductor device, the method comprising:
providing a substrate;
forming a plurality of active patterns extending in a first direction on the substrate;
forming a pre-gate structure extending in a second direction and intersecting the plurality of active patterns, the pre-gate structure including a pre-gate electrode, a pre-gate spacer, and a pre-gate capping pattern on the pre-gate electrode;
forming a gate separation trench by partially removing the pre-gate electrode, the pre-gate spacer, and the pre-gate capping pattern, a connecting spacer being formed by partially removing the pre-gate spacer; and
forming a gate separation structure filling the gate separation trench, the gate separation structure including a gate separation liner and a gate separation filling film on the gate separation liner, the gate separation liner of the gate separation structure extending along a top surface and sidewalls of the connecting spacer and contacting the connecting spacer, and a topmost surface of the gate separation liner and a top surface of the pre-gate capping pattern being on a same plane.
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