US 11,955,501 B2
Image sensor with improved light conversion efficiency
Shih-Yu Liao, Hsinchu (TW); Tsai-Hao Hung, Hsinchu (TW); and Ying-Hsun Chen, Taoyuan (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed on Jun. 6, 2022, as Appl. No. 17/805,573.
Application 17/805,573 is a continuation of application No. 16/830,966, filed on Mar. 26, 2020, granted, now 11,355,544.
Prior Publication US 2022/0310679 A1, Sep. 29, 2022
Int. Cl. H01L 27/146 (2006.01); G01J 1/44 (2006.01); H04N 25/70 (2023.01)
CPC H01L 27/1464 (2013.01) [G01J 1/44 (2013.01); H01L 27/14621 (2013.01); H01L 27/14627 (2013.01); H01L 27/14629 (2013.01); H01L 27/1463 (2013.01); H01L 27/14634 (2013.01); H01L 27/14636 (2013.01); H01L 27/14685 (2013.01); H04N 25/70 (2023.01); G01J 2001/448 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An image-sensing structure, comprising:
a stack structure, comprising:
a first layer with a first refractive index and a first thickness substantially equal to one fourth of a wavelength of an incident radiation divided by the first refractive index; and
a second layer with a second refractive index different from the first refractive index and a second thickness substantially equal to one fourth of the wavelength of the incident radiation divided by the second refractive index;
a radiation-sensing region comprising a first epitaxial layer disposed on the stack structure;
a second epitaxial layer in contact with a sidewall and a top surface of the radiation-sensing region; and
an implant layer in contact with a sidewall and a top surface of the second epitaxial layer.