US 11,955,472 B2
Semiconductor-controlled rectifier with low trigger voltage for electrostatic discharge protection
Meng Miao, Williston, VT (US); Alain Loiseau, Williston, VT (US); Souvick Mitra, Essex Junction, VT (US); Wei Liang, South Burlington, VT (US); Robert J. Gauthier, Jr., Williston, VT (US); and Anindya Nath, Essex Junction, VT (US)
Assigned to GlobalFoundries U.S. Inc., Malta, NY (US)
Filed by GlobalFoundries U.S. Inc., Malta, NY (US)
Filed on Dec. 17, 2021, as Appl. No. 17/554,222.
Prior Publication US 2023/0197707 A1, Jun. 22, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 27/12 (2006.01); H01L 29/74 (2006.01)
CPC H01L 27/0248 (2013.01) [H01L 27/1207 (2013.01); H01L 29/7436 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising:
a hybrid semiconductor substrate comprising bulk semiconductor and semiconductor-on-insulator regions; and
a semiconductor-controlled rectifier comprising:
in a first bulk semiconductor region, a first Pwell and a first Nwell positioned laterally adjacent to the first Pwell;
in a second bulk semiconductor region, a second Nwell electrically connected to an anode terminal; and
in a semiconductor-on-insulator region positioned laterally between the first bulk semiconductor region and the second bulk semiconductor region, a second Pwell positioned laterally between and abutting the first Nwell and the second Nwell, an insulator layer on the second Pwell, and a semiconductor layer on the insulator layer positioned laterally between and abutting trench isolation regions, and electrically connected to the anode terminal.