US 11,955,463 B2
Direct bonded stack structures for increased reliability and improved yield in microelectronics
Cyprian Emeka Uzoh, San Jose, CA (US); Rajesh Katkar, Milpitas, CA (US); Thomas Workman, San Jose, CA (US); Guilian Gao, San Jose, CA (US); Gaius Gillman Fountain, Jr., Youngsville, NC (US); Laura Wills Mirkarimi, Sunol, CA (US); Belgacem Haba, Saratoga, CA (US); Gabriel Z. Guevara, San Jose, CA (US); and Joy Watanabe, Campbell, CA (US)
Assigned to ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed by ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed on Feb. 25, 2022, as Appl. No. 17/681,563.
Application 17/681,563 is a continuation of application No. 16/911,360, filed on Jun. 24, 2020, granted, now 11,296,053.
Claims priority of provisional application 62/866,965, filed on Jun. 26, 2019.
Prior Publication US 2022/0293567 A1, Sep. 15, 2022
Int. Cl. H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 25/0657 (2013.01) [H01L 21/561 (2013.01); H01L 23/3121 (2013.01); H01L 24/97 (2013.01); H01L 2224/0401 (2013.01); H01L 2924/3511 (2013.01); H01L 2924/35121 (2013.01)] 55 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a substrate; and
a die stack disposed on the substrate, the die stack comprising:
a plurality of directly bonded dies comprising a first die having a first hybrid bonding surface and a second die having a second hybrid bonding surface, wherein the first bonding surface of the first die is hybrid bonded to the second bonding surface of the second die without an adhesive;
a top die on the plurality of directly bonded dies; and
a non-die layer disposed between the top die and the plurality of directly bonded dies, wherein the non-die layer comprises at least one compliant layer;
a first lateral die support layer disposed along at least a portion of a sidewall of the first die, an entirety of the first lateral die support layer disposed laterally outside a footprint of the first die; and
a second lateral die support layer disposed laterally adjacent the top die and at least a portion of the first lateral die support layer, an entirety of the second lateral die support layer disposed laterally outside the die stack.