US 11,955,459 B2
Package structure
Shu-Hang Liao, Hsinchu (TW); Chih-Wei Wu, Yilan County (TW); Jing-Cheng Lin, Hsinchu (TW); Szu-Wei Lu, Hsinchu (TW); and Ying-Ching Shih, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Mar. 7, 2022, as Appl. No. 17/687,695.
Application 17/687,695 is a continuation of application No. 16/454,098, filed on Jun. 27, 2019, granted, now 11,270,976.
Application 16/454,098 is a continuation of application No. 15/716,506, filed on Sep. 26, 2017, granted, now 10,340,253, issued on Jul. 2, 2019.
Prior Publication US 2022/0189920 A1, Jun. 16, 2022
Int. Cl. H01L 25/065 (2023.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01)
CPC H01L 25/0655 (2013.01) [H01L 21/56 (2013.01); H01L 21/563 (2013.01); H01L 21/568 (2013.01); H01L 21/6835 (2013.01); H01L 23/3114 (2013.01); H01L 23/3185 (2013.01); H01L 24/03 (2013.01); H01L 24/17 (2013.01); H01L 24/81 (2013.01); H01L 25/065 (2013.01); H01L 23/3128 (2013.01); H01L 2221/68345 (2013.01); H01L 2224/0231 (2013.01); H01L 2224/04105 (2013.01); H01L 2924/15173 (2013.01); H01L 2924/181 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A package structure, comprising:
a first die and a second die;
a dielectric layer, disposed on the first die and the second die;
a bridge, electrically connected to the first die and the second die, wherein the dielectric layer is spaced apart from the bridge;
an encapsulant, disposed on the dielectric layer and laterally encapsulating the bridge; and
a redistribution layer structure, disposed over the encapsulant and the bridge,
wherein a top surface of the bridge is in contact with the RDL structure,
wherein the dielectric layer and a portion of the encapsulant are in contact with the first die and the second die.